Title :
Wavelength-tunable InGaAsP-InP multiple-λ/4-shifted distributed feedback laser
Author :
Horita, Masayoshi ; Tsurusawa, Munefumi ; Utaka, Katsuyuki ; Matsushima, Yuichi
Author_Institution :
KDD R&D Labs., Saitama, Japan
fDate :
6/1/1993 12:00:00 AM
Abstract :
A wavelength-tunable InGaAsP/InP multiple-λ/4-shifted distributed-feedback (MQS-DFB) laser was demonstrated for the first time. A DFB laser with three λ/4 shifts and five electrodes was fabricated, and its fundamental characteristics, such as tunability, spectral linewidth, and FM response, were investigated. Stable single-mode operation with a side-mode suppression ratio (SMSR) of more than 40 dB was confirmed. Continuous wavelength tuning under constant output power mode was obtained with a range of 1.7 nm. Minimum spectral linewidth was 3 MHz at an output power of 20 mW. Flat FM response up to 4 GHz with an efficiency of about 0.65 GHz/mA was also obtained
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; laser tuning; optical modulation; semiconductor lasers; 20 mW; Frequency modulation response; constant output power mode; continuous wavelength tuning; efficiency; electrodes; fundamental characteristics; side-mode suppression ratio; single-mode operation; spectral linewidth; tunability; wavelength tunable InGaAsP-InP multiple quarter wavelength shifted distributed feedback laser; Distributed Bragg reflectors; Distributed feedback devices; Laser feedback; Laser modes; Laser transitions; Laser tuning; Power generation; Quantum well lasers; Refractive index; Tunable circuits and devices;
Journal_Title :
Quantum Electronics, IEEE Journal of
