• DocumentCode
    948458
  • Title

    Threshold dependence on active-layer thickness in InGaAsP/InP d.h. lasers

  • Author

    Nahory, R.E. ; Pollack, M.A.

  • Author_Institution
    Bell Telephone Laboratories, Holmdel, USA
  • Volume
    14
  • Issue
    23
  • fYear
    1978
  • Firstpage
    727
  • Lastpage
    729
  • Abstract
    Room-temperature threshold current density Jth against active-layer thickness d is reported for pulsed InGaAsP/InP double-heterostructure lasers operating at wavelengths near 1.23 ¿m. For d ¿ 1 ¿m, Jth/d is 5.0 kA cm¿2 ¿m¿1, whereas the lowest threshold is 1.6 kA cm¿2 for d ¿ 0.2 ¿m. The threshold dependence is fitted by a numerical calculation based on a two-parameter gain model.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; InGaAsP/InP; active layer thickness; double heterostructure lasers; room temperature threshold current density; threshold dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780491
  • Filename
    4242723
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=948458