Self-aligned bend waveguide (SBW) AlGaInP visible laser diode with small beam astigmatism

Author

Furuya, Akira ; Kito, Yasuhiro ; Fukushima, Takehiro ; Sugano, Mami ; Sudo, Hisao ; Anayama, Chikashi ; Kondo, Makoto ; Tanahashi, Toshiyuki

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

29

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

1869

Lastpage

1873

Abstract

The self-aligned bend waveguide (SBW) AlGaInP visible laser developed produces an index guiding waveguide structure by the bend of the double heterolayers and offers a very small beam astigmatism. The laser was fabricated using two-step metalorganic vapor phase epitaxy (MOVPE). Kink-free operation at 40 mW was achieved by modifying the device parameters. The measured beam astigmatism was maintained at less than 1 μm and did not vary with output power. The aging results under the condition of 50°C and 20 mW output power demonstrated the laser´s reliability

Keywords

III-V semiconductors; aberrations; aluminium compounds; gallium compounds; indium compounds; laser beams; optical workshop techniques; semiconductor lasers; vapour phase epitaxial growth; 20 mW; 40 mW; 50 degC; AlGaInP; MOVPE; double heterolayers; index guiding waveguide structure; kink-free operation; self-aligned bend waveguide; semiconductor; small beam astigmatism; two-step metalorganic vapor phase epitaxy; visible laser diode; Diode lasers; Epitaxial growth; Epitaxial layers; Laser beams; Maintenance; Molecular beam epitaxial growth; Power generation; Power measurement; Vision defects; Waveguide lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.234446

Filename

234446