0.98 μm InGaAs-InGaAsP-InGaP GRIN-SCH SL-SQW lasers for coupling high optical power into single-mode fiber

Author

Ohkubo, Michio ; Namiki, Shu ; Ijichi, Tetsuro ; Iketani, Akira ; Kikuta, Toshio

Author_Institution

Furukawa Electric Co. Ltd., Yokohama, Japan

Volume

29

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

1932

Lastpage

1935

Abstract

A CW optical power of 75 mW coupled into a single-mode fiber (SMF) at a driving current of 200 mA was achieved by InGaAs-InGaAsP-InGaP graded-index separate-confinement-heterostructure strained-layer single-quantum-well (GRIN-SCH Sl-SQW) ridge waveguide lasers emitting at 0.98 μm. The GRIN-SCH profile was optimized to minimize the series resistance due to spikes at GaAs-InGaP heterointerfaces. Highly efficient coupling into a SMF with cutoff wavelength of 0.88 μm by precisely controlling the ridge mesa width (around 2 μm) and reducing the aspect ratio of the far-field pattern to 1.9. As a result, 0.98-μm InGaP cladding lasers show performance comparable to the conventional AlGaAs cladding lasers

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; gradient index optics; indium compounds; optical couplers; optical fibres; semiconductor lasers; 0.98 micron; 200 mA; 75 mW; CW optical power; GRIN-SCH Sl-SQW; GaAs-InGaP; InGaAs-InGaAsP-InGaP; aspect ratio; far-field pattern; graded-index separate-confinement-heterostructure; ridge mesa width; semiconductors; single-mode fiber; strained-layer single quantum-well lasers; Chemical lasers; Fiber lasers; Gallium arsenide; Laser beam cutting; Laser excitation; Optical coupling; Optical pumping; Power lasers; Pump lasers; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.234455

Filename

234455