Remarkable improvement in the temperature characteristics of GaAs lasers using an InGaAlP cladding layer

Author

Itaya, Kazuhiko ; Hatakoshi, Gen-ichi ; Ishikawa, Masayuki ; Nishikawa, Yukie ; Saito, Shinji ; Okajima, Masaki

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

29

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

2068

Lastpage

2073

Abstract

A GaAs laser diode employing InGaAlP as the cladding has been investigated. Continuous wave (CW) operation was obtained at temperatures as high as 212°C. A large characteristic temperature T₀ of 190 K was maintained up to 150°C. These results were attributed to a reduction of electron overflow by a large band-gap difference between the GaAs active and InGaAlP cladding layers. Laser characteristics did not indicate any significant problem due to a heterointerface of GaAs-InGaAlP with high-Al composition

Keywords

III-V semiconductors; aluminium compounds; claddings; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; 190 K; 20 to 212 degC; GaAs; GaAs laser diode; InGaAlP cladding layer; band-gap difference; continuous wave operation; electron overflow; heterointerface; temperature characteristics; Artificial intelligence; DH-HEMTs; Electrons; Gallium arsenide; Lattices; Optical design; Photonic band gap; Pump lasers; Semiconductor lasers; Temperature;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.234470

Filename

234470