Analysis of slow-wave transmission lines on multi-layered semiconductor structures including conductor loss

Author

Liou, Jenn-chorng ; Lau, Kei May

Author_Institution

Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA

Volume

41

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

824

Lastpage

829

Abstract

Metal lines on semiconductor devices and circuits sometimes show slow-wave phenomena. To determine signal transmission characteristics along the lines, the typical assumption that metal is perfectly conducting is not always valid. A simple and accurate means is used here to include metallic loss in spectral domain analysis of planar transmission lines built on multilayer semiconducting media. Experimental results with a modulation-doped field-effect transistor (MODFET) structure and comparison with the calculations are presented

Keywords

MMIC; high electron mobility transistors; losses; microstrip lines; solid-state microwave devices; spectral-domain analysis; strip lines; waveguide theory; CPW; MODFET; conductor loss; coplanar waveguide; metallic loss; modulation-doped field-effect transistor; multi-layered semiconductor structures; multilayer semiconducting media; planar transmission lines; signal transmission characteristics; slow-wave transmission lines; spectral domain analysis; Distributed parameter circuits; Epitaxial layers; FETs; Nonhomogeneous media; Planar transmission lines; Propagation losses; Semiconductivity; Semiconductor devices; Spectral analysis; Transmission lines;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.234518

Filename

234518