DocumentCode
949222
Title
X -band low phase distortion MMIC power limiter
Author
Parra, T. ; Dienot, Jm ; Gayral, M. ; Pouysegur, M. ; Sautereau, Jf ; Graffeuil, J.
Author_Institution
LAAS-CNRS, Univ. Paul Sabatier, Toulouse, France
Volume
41
Issue
5
fYear
1993
fDate
5/1/1993 12:00:00 AM
Firstpage
876
Lastpage
879
Abstract
Describes the design and performance of an 8-GHz MMIC (monolithic microwave integrated circuit) MESFET (metal-semiconductor FET) power limiter. This limiter incorporates a special gate biasing scheme and makes use of appropriate load conditions which reduce the unexpected phase variations experienced by the signal through the device. Measured performances (phase variations less than 8 over a 22-dB input power range) are found to be in agreement with the theoretical ones obtained from large signal simulations
Keywords
MMIC; field effect integrated circuits; microwave limiters; 8 GHz; MESFET; MMIC power limiter; X-band; gate biasing scheme; large signal simulations; load conditions; phase distortion; phase variations; FET integrated circuits; MESFET integrated circuits; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Phase measurement; Power measurement;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.234526
Filename
234526
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