• DocumentCode
    949281
  • Title

    Rectification at n-n GaAs:(Ga,Al)As heterojunctions

  • Author

    Chandra, Aniruddha ; Eastman, L.F.

  • Author_Institution
    Cornell University, School of Electrical Engineering, Ithaca, USA
  • Volume
    15
  • Issue
    3
  • fYear
    1979
  • Firstpage
    90
  • Lastpage
    91
  • Abstract
    n-n Ga0.7Al0.3As: GaAs heterojunction structures have been grown by l.p.e., with 1 × 1015 cm-3 net carriers in the ternary. N/W profiling across the heterojunction shows an accumulation region on the GaAs side and a depletion region on the (Ga, Al)As side. I/V characteristics at room temperature show significant rectification.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junctions; GaAlAs-GaAs heterojunctions; IV characteristics; accumulation region; depletion region; n-n heterojunctions; rectification;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790066
  • Filename
    4242983
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=949281