A new validated physically based IGCT model for circuit simulation of snubberless and series operation

Author

Kuhn, Harald ; Schröder, Dierk

Author_Institution

Autom. & Drives, Siemens AG, Nuremburg, Germany

Volume

38

Issue

6

fYear

2002

Firstpage

1606

Lastpage

1612

Abstract

This paper deals with a new physically based model for the circuit simulation, which is implemented in Saber MAST, to calculate the static and dynamic behavior of integrated gate-commutated thyristor (IGCT) devices correctly. The model is verified by comparing simulation with experimental results of a 4.5-kV/3-kA IGCT in hard-switch snubberless operation. Furthermore, simulation results of two series-connected IGCT switches are analyzed, in particular, concerning the problem of nonsymmetrically distributed blocking voltages between the switches if snubbers are omitted due to inevitably existent differences concerning the exact device properties and the gate drives, respectively. An idea for dimensioning the snubber capacity is given.

Keywords

MOS-controlled thyristors; circuit simulation; power semiconductor switches; 3 kA; 4.5 kV; IGCT devices; Saber MAST; circuit simulation; dynamic behavior; gate drives; hard-switch snubberless operation; integrated gate-commutated thyristor devices; nonsymmetrically distributed blocking voltages; physically based model; series-connected IGCT switches; snubber capacity dimensioning; static behavior; Analytical models; Anodes; Cathodes; Circuit simulation; Industry Applications Society; Physics; Snubbers; Switches; Thyristors; Voltage;

fLanguage

English

Journal_Title

Industry Applications, IEEE Transactions on

Publisher

ieee

ISSN

0093-9994

Type

jour

DOI

10.1109/TIA.2002.804757

Filename

1058116