Radiation-induced interface traps in MOS devices: capture cross section and density of states of Pb1 silicon dangling bond centers

P_b centers dominate radiation-induced interface defects. On the (100) Si/SiO₂ interface, the P_b0 center dominates radiation damage, but another center, the P_b1, plays a secondary role. Neither the electronic density of states nor the capture cross section of this center are well established. This study provides information about both the density of states and capture cross section of P_b1. The study also shows that some refinement is required in techniques utilized to separate interface trap space charge from space charge in the oxide.