• DocumentCode
    949487
  • Title

    Temperature dependence of impact ionisation rates in GaAs between 20° and 200°C

  • Author

    Capasso, Federico ; Nahory, R.E. ; Pollack, M.A.

  • Author_Institution
    Bell Laboratories, Holmdel, USA
  • Volume
    15
  • Issue
    4
  • fYear
    1979
  • Firstpage
    117
  • Lastpage
    118
  • Abstract
    We report the temperature dependence, between 20° and 200°C, of free carrier impact ionisation rates in GaAs along the <100>, <110> and <111> directions for the electric field range 4-5 × 105 V/cm. These results should be of interest for the design of avalanche devices such as Impatt diodes which have high operating temperatures.
  • Keywords
    III-V semiconductors; IMPATT diodes; gallium arsenide; impact ionisation; 4 to 5 x 105 V/cm electric field; GaAs; Impatt diodes; avalanche devices; free carrier impact ionisation rates; high operating temperatures; temperature dependence; temperatures between 20 and 200 degrees C;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790086
  • Filename
    4243004
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=949487