GaAs monolithic integrated photoreceiver for 0.8 Â¿m wavelength: association of Schottky photodiode and FET

Author

Verriele, H. ; Lorriaux, J.L. ; Legry, P. ; Gouy, J.P. ; Vilcot, J.P. ; Decoster, D.

Author_Institution

UniversitÃ© des Sciences et Techniques de Lille-Flandres-Artois, Centre HyperfrÃ©quences et Semiconducteurs, UA CNRS 287, Villeneuve d´´Ascq, France

Volume

135

Issue

2

fYear

1988

fDate

4/1/1988 12:00:00 AM

Firstpage

92

Lastpage

95

Abstract

We report the fabrication and the characterisation of a GaAs planar monolithic integrated photoreceiver. It consists of a semiplanar Schottky photodiode, associated with a field-effect transistor. Static, dynamic and noise properties have been investigated and interpreted, taking into account the particular characteristics of the material and the design of the integrated circuit. For example, sensitivity up to Â¿30 dBm can be achieved at 250 Mbits/s for a 1E-9 bit error rate.

Keywords

III-V semiconductors; field effect transistors; gallium arsenide; integrated optoelectronics; optical communication equipment; photodiodes; receivers; 0.8 micron; 250 Mbit/s; FET; GaAs photoreceiver; Schottky photodiode; dynamic properties; field-effect transistor; integrated circuit; monolithic integrated photoreceiver; noise properties; semiconductor; static properties;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings J

Publisher

iet

ISSN

0267-3932

Type

jour

DOI

10.1049/ip-j:19880020

Filename

4648671