Dose and microdose measurement based on threshold shifts in MOSFET arrays in commercial SRAMs

Author

Scheick, Leif Z. ; Swift, Gary M.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

49

Issue

6

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

2810

Lastpage

2817

Abstract

A new dosimetry method using an array of MOS transistors is described for a measuring dose absorbed from ionizing radiation. The method uses direct measurement of the number of cells that change state as a function of applied-operating bias to a SRAM as a function of absorbed dose. Because the input and output of a SRAM are digital, the measurement of dose is easily accessible by a remote processing system. The devices show minimal response to total ionizing dose, but individual SRAM cells show strong microdose effects.

Keywords

CMOS memory circuits; SRAM chips; arrays; dosimetry; radiation effects; MOS transistors; MOSFET arrays; applied-operating bias; commercial SRAMs; direct measurement; dose measurement; dosimetry method; ionizing radiation; microdose measurement; remote processing system; single event effect; single-hard error; threshold shifts; CMOS logic circuits; Dosimetry; Ionizing radiation; Logic devices; Logic programming; MOSFET circuits; Propulsion; Random access memory; Space technology; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.805445

Filename

1134225