DocumentCode
949684
Title
Analysis of the influence of dark current on the performance of optical receivers employing superlattice APDs
Author
O´Reilly, J.J. ; Fyath, R.S.
Author_Institution
University College of North Wales, School of Electronic Engineering Science, Bangor, UK
Volume
135
Issue
2
fYear
1988
fDate
4/1/1988 12:00:00 AM
Firstpage
109
Lastpage
118
Abstract
Formulas are derived for the effective mean value and effective excess-noise factor associated with dark-current induced hole-electron pairs and these are used to study the influence of dark current, and residual hole ionisation on device and receiver performance for superlattice avalanche photodiodes (APDs). The analyses should provide useful guidelines for the design of high performance superlattice APDs and receivers.
Keywords
avalanche photodiodes; optical communication equipment; receivers; semiconductor superlattices; dark current; device performance; excess-noise factor; induced hole-electron pairs; optical receivers; residual hole ionisation; superlattice APDs; superlattice avalanche photodiodes;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings J
Publisher
iet
ISSN
0267-3932
Type
jour
DOI
10.1049/ip-j.1988.0024
Filename
4648684
Link To Document