Proton radiation effects in 0.35 μm partially depleted SOI MOSFETs fabricated on UNIBOND

Author

Li, Ying ; Niu, Guofu ; Cressler, John D. ; Patel, Jagdish ; Marshall, Paul W. ; Kim, Hak S. ; Liu, Mike S T ; Reed, Robert A. ; Palmer, Michael J.

Author_Institution

Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA

Volume

49

Issue

6

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

2930

Lastpage

2936

Abstract

We investigate the proton radiation tolerance of a 0.35 μm SOI technology on UNIBOND material. The radiation response is characterized by threshold-voltage shifts of the front-gate and back-gate transistors. An increase of the front-gate threshold voltage is observed on the n-channel MOSFETs after irradiation and is attributed to radiation-induced interface states at the front-gate oxide/silicon interface. A double g_m peak behavior is observed on the back-gate g_m-V_GS curves for both n- and p-channel MOSFETs and is attributed to silicon/back-gate oxide interface traps with a delta-function-like distribution in the energy gap. The results suggest this 0.35 μm technology on UNIBOND material performs well in a proton-radiation environment.

Keywords

MOSFET; interface states; proton effects; silicon-on-insulator; 0.35 mm; Si-SiO₂; UNIBOND material; delta function distribution; energy gap; front-gate oxide/silicon interface states; n-channel MOSFET; p-channel MOSFET; partially depleted SOI MOSFET; proton radiation effects; silicon/back-gate oxide interface traps; threshold voltage; Aerospace electronics; Aerospace engineering; CMOS technology; Interface states; MOSFETs; Propulsion; Proton radiation effects; Silicon; Space technology; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.805428

Filename

1134243