DocumentCode
949779
Title
Study of transient current induced by heavy-ion in NMOS/SOI transistors
Author
Colladant, T. ; Flament, O. ; L´Hoir, A. ; Ferlet-Cavrois, V. ; D´hose, C. ; du Port de Potcharra, J.
Author_Institution
Groupe de Phys. des Solides, Paris VI & VII Univ., France
Volume
49
Issue
6
fYear
2002
fDate
12/1/2002 12:00:00 AM
Firstpage
2957
Lastpage
2964
Abstract
The parasitic bipolar transistor of NMOS/SOI transistors is a key element to determine the single-event upset (SEU) sensitivity. Parasitic bipolar transistor response has been investigated through transient current measurements induced by high energy heavy ions and three-dimensional (3-D) simulations. Experimental results reported allow to estimate the parasitic current gain as a function of the heavy ion location in the MOS transistor.
Keywords
MOSFET; ion beam effects; silicon-on-insulator; NMOS/SOI transistor; heavy ion irradiation; parasitic bipolar transistor; parasitic current gain; single-event upset sensitivity; three-dimensional simulation; transient current; Bipolar transistors; Current measurement; Dielectric substrates; Dielectrics and electrical insulation; Isolation technology; MOS devices; MOSFETs; Silicon on insulator technology; Single event upset; Space technology;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2002.805437
Filename
1134246
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