Charge removal from FGMOS floating gates

Radiation effects on floating-gate-metal-oxide-semiconductor (FGMOS) devices in the passive or quiescent mode are due to a combination of the removal of negative charge from the floating gate and the generation and trapping of positive charge in the gate oxide. The latter is subject to room temperature annealing but not the former. No difference was observed between the effects of trapped charge on transistors in "0" and "1" logic states. The amount of negative charge per unit dose that is removed from the floating gates by heavy ions is less than that removed by 6 MeV electrons, which at least partially explains the sublinear dependence on linear energy transfer.