DocumentCode
950120
Title
Total-dose hardening of a bipolar-voltage comparator
Author
Pease, Ronald L. ; Maher, M.C. ; Shaneyfelt, M.R. ; Savage, M.W. ; Baker, P. ; Krieg, J. ; Turflinger, T.L.
Author_Institution
RLP Res. Inc., Albuquerque, NM, USA
Volume
49
Issue
6
fYear
2002
fDate
12/1/2002 12:00:00 AM
Firstpage
3180
Lastpage
3184
Abstract
A radiation-tolerant bipolar-voltage comparator experienced severe degradation of radiation hardness when layout of the part was redrawn and the process moved from a 4-in wafer to a 6-in wafer line. The reasons for the loss in hardness are identified, and it is shown that modifications to the design layout eliminate the problem.
Keywords
bipolar analogue integrated circuits; comparators (circuits); integrated circuit layout; integrated circuit reliability; radiation hardening (electronics); 6 in; bipolar analog circuits; bipolar-voltage comparator; degradation; design layout; radiation hardness; radiation-tolerant circuit; total-dose hardening; wafer line; Aerospace testing; Analog circuits; Cranes; Degradation; Ionization; Laboratories; Military standards; Positron emission tomography; Tellurium; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2002.805404
Filename
1134278
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