DocumentCode
950153
Title
Radiation effects in micro-electromechanical systems (MEMS): RF relays
Author
McClure, Steven S. ; Edmonds, L.D. ; Mihailovich, R. ; Johnston, A.H. ; Alonzo, P. ; DeNatale, J. ; Lehman, J. ; Yui, C.
Author_Institution
Jet Propulsion Lab., Pasadena, CA, USA
Volume
49
Issue
6
fYear
2002
fDate
12/1/2002 12:00:00 AM
Firstpage
3197
Lastpage
3202
Abstract
GaAs micro-electromechanical RF relays fabricated by surface micromachining techniques were characterized for their response to total ionizing dose. Microrelays with two different geometries were studied. For one geometry, changes in switch actuation voltage at moderate dose levels were observed. For an alternative geometry, no change in actuation voltage was observed. A mechanism for dielectric charge trapping and its effect on the electrostatic force is proposed.
Keywords
III-V semiconductors; gallium arsenide; micromachining; microrelays; radiation effects; GaAs; GaAs MEMS RF relay; dielectric charge trapping; electrostatic force; microelectromechanical system; microrelay; radiation effects; surface micromachining; switch actuation voltage; total ionizing dose; Gallium arsenide; Geometry; Microelectromechanical systems; Micromachining; Micromechanical devices; Radiation effects; Radio frequency; Relays; Switches; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2002.805406
Filename
1134281
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