Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors

Author

Hu, Xinwen ; Choi, Bo K. ; Barnaby, Hugh J. ; Fleetwood, Daniel M. ; Schrimpf, Ronald D. ; Galloway, Kenneth F. ; Weller, Robert A. ; McDonald, Kyle ; Mishra, Umesh K. ; Dettmer, Ross W.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA

Volume

49

Issue

6

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

3213

Lastpage

3216

Abstract

The effects of 1.8-MeV and 105-MeV proton irradiation on AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are reported. For 1.8-MeV protons, the degradation of the transistors is caused by an increase in the base current and a large decrease in the collector current. The device degradation is much less after irradiation with 105-MeV protons, because of lower nonionizing energy loss (NIEL) in the sensitive region of the device. There is no improvement in device performance after three months of room temperature annealing.

Keywords

III-V semiconductors; aluminium compounds; annealing; energy loss of particles; gallium arsenide; heterojunction bipolar transistors; proton effects; 1.8 MeV; 105 MeV; AlGaAs-GaAs; AlGaAs/GaAs heterojunction bipolar transistor; annealing; base current; collector current; device degradation; displacement damage; nonionizing energy loss; proton irradiation; Annealing; Degradation; Doping; Energy loss; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Protons; Space technology; Temperature sensors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.805399

Filename

1134284