DocumentCode
950192
Title
Low-noise microwave f.e.t.s fabricated by molecular-beam epitaxy
Author
Bandy, S.G.
Author_Institution
Varian Associates Inc., Corporate Solid State Laboratory, Palo Alto, USA
Volume
15
Issue
8
fYear
1979
Firstpage
218
Lastpage
219
Abstract
The growth of m.b.e. GaAs suitable for f.e.t. fabrication is reported. The m.b.e. structure consists of an n+ = 2.5×1018 cm¿3 contact layer on top of an n+ = 3.5×1017 cm¿3 active layer. Using this material, f.e.t.s. have been fabricated that have a minimum noise figure of 1.5 dB with an associated gain of 15 dB at 8 GHz. These are the best results yet reported for low-noise m.b.e. GaAs f.e.t.s.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; solid-state microwave devices; GaAs; MESFET; Schottky barrier gate FET; fabrication; gain; microwave; minimum noise figure;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19790154
Filename
4243113
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