• DocumentCode
    950363
  • Title

    Planar photodiodes made from vapour-phase epitaxial InxGa1¿xAs

  • Author

    Susa, Nobuhiko ; Yamauchi, Yoshiharu ; Kanbe, Hiroshi

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    15
  • Issue
    8
  • fYear
    1979
  • Firstpage
    238
  • Lastpage
    240
  • Abstract
    Planar photodiodes for the 1.0¿1.3 ¿m wavelength range have been fabricated by diffusing Zn into vapour-phase epitaxial InxGa1¿xAs grown on a GaAs substrate. For compositions x=0¿0.31, the dark current and spectral response are reported. The dark-current density for x=0.17 was as low as 5.4 × 10¿6 A/cm2 at VB/2.
  • Keywords
    III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; infrared detectors; vapour phase epitaxial growth; GaAs substrate; InxGa1-xAs; dark current; planar photodiodes; spectral response; vapour phase epitaxial;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790169
  • Filename
    4243152
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=950363