Conductive atomic force microscopy application on leaky contact analysis and characterization

Author

Chuang, J.H. ; Lee, Jon C.

Author_Institution

Taiwan Semicond. Manuf. Co. Ltd., Hsin-Chu, Taiwan

Volume

4

Issue

1

fYear

2004

fDate

3/1/2004 12:00:00 AM

Firstpage

50

Lastpage

53

Abstract

Conductive atomic force microscopy (C-AFM) is a popular technique for the electrical characterization of dielectric film and gate-oxide integrity. In this paper, we describe the application of C-AFM to fault identification at the contact level. We show that current mapping using C-AFM can easily isolate faulty contacts. In addition, C-AFM can also provide I/V characterization for root cause analysis of failures.

Keywords

atomic force microscopy; dielectric thin films; failure analysis; integrated circuits; leakage currents; semiconductor technology; I/V characterization; conductive atomic force microscopy; dielectric film; electrical characterization; fault identification; gate-oxide integrity; integrated circuits; leaky contact analysis; leaky contact characterization; physical failure analysis; semiconductor manufacturing; Atomic force microscopy; Circuit faults; Contacts; Electron emission; Failure analysis; Scanning electron microscopy; Semiconductor device manufacture; Surface resistance; Surface topography; Voltage;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2004.825556

Filename

1284299