DocumentCode
950425
Title
Bistability in inhomogeneously pumped quantum well laser diodes
Author
Kucharska, A.I. ; Blood, P. ; Fletcher, E.D. ; Hulyer, P.J.
Author_Institution
Philips, Research Laboratories, Redhill, UK
Volume
135
Issue
1
fYear
1988
fDate
2/1/1988 12:00:00 AM
Firstpage
31
Lastpage
33
Abstract
Hysteresis has been observed in the light-current characteristics of inhomogeneously pumped GaAs/AlGaAs laser diodes with both MQW and bulk GaAs active layers. Bistable action was observed in both types of device, at switching speeds suggesting that electronic mechanisms were responsible for saturation of the absorption in the passive region of each structure. In the MQW case, the wavelength of operation of the device suggested saturation of the excitonic absorption.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; optical bistability; optical information processing; optical pumping; semiconductor junction lasers; GaAs-AlGaAs; MQW active layers; bulk GaAs active layers; excitonic absorption saturation; inhomogeneously pumped quantum well laser diodes; light-current characteristics; semiconductor;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings J
Publisher
iet
ISSN
0267-3932
Type
jour
DOI
10.1049/ip-j.1988.0007
Filename
4648757
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