• DocumentCode
    950583
  • Title

    New semiconductor active device: the conductivity-controlled transistor

  • Author

    Caruso, A. ; Spirito, P. ; Vitale, G.

  • Author_Institution
    University of Naples, Istituto Electrotecnico, Napoli, Italy
  • Volume
    15
  • Issue
    10
  • fYear
    1979
  • Firstpage
    267
  • Lastpage
    268
  • Abstract
    A new semiconductor 3-terminal device has been realised in which a majority-carrier current, flowing in a N+-N-N+ structure, is controlled by a minority-carrier current supplied by a forward-biased P+-N junction. The properties of this device are presented and discussed in terms of a physical model.
  • Keywords
    semiconductor device models; transistors; N+-N-N+ structure; conductivity controlled transistor; controlling minority carrier current; forward biased p+-n junction; majority carrier current control; physical model; properties;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790189
  • Filename
    4243211
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=950583