Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates

Author

Wang, S. ; Hurst, J.B. ; Ma, F. ; Sidhu, R. ; Sun, X. ; Zheng, X.G. ; Holmes, A.L. ; Huntington, A. ; Coldren, L.A. ; Campbell, J.C.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

14

Issue

12

fYear

2002

Firstpage

1722

Lastpage

1724

Abstract

We report low noise multiplication region structures designed for avalanche photodiodes grown on InP substrates. By either implementing a single heterostructure or using a pseudograded structure in the multiplication region, better control of spatial distribution of impact-ionization for both injected and feedback carriers can be achieved; localization of the carrier impact ionization process has resulted in very low excess noise.

Keywords

III-V semiconductors; avalanche photodiodes; impact ionisation; indium compounds; optical noise; optical receivers; photodetectors; InAlAs; InP; InP substrates; avalanche photodiodes; carrier impact ionization process; feedback carriers; impact-ionization; injected carriers; low noise multiplication region structures; low-noise impact-ionization-engineered avalanche photodiodes; multiplication region; pseudograded structure; single heterostructure; spatial distribution; very low excess noise; Avalanche photodiodes; Charge carrier processes; Dark current; Feedback; Heterojunctions; Impact ionization; Indium compounds; Indium phosphide; Photonic band gap; Sun;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2002.804651

Filename

1058264