Electrically pumped circular-grating surface-emitting DBR laser on InGaAs strained single-quantum-well structure

Author

Fallahi, M. ; Chatenoud, F. ; Templeton, I.M. ; Dion, M. ; Wu, C.M. ; Delage, A. ; Barber, R.

Author_Institution

Nat. Res. Council of Canada, Ottawa, Ont., Canada

Volume

4

Issue

10

fYear

1992

Firstpage

1087

Lastpage

1089

Abstract

The authors demonstrate the fabrication and room temperature operation of an electrically pumped circular-grating surface-emitting distributed-Bragg-reflector laser. An InGaAs/GaAs single quantum well (SQW) graded-index separate confinement heterostructure (GRINSCH) structure was grown by one-step molecular beam epitaxy (MBE). Circular gratings were defined by focused ion beam lithography. The lasing wavelength was 942 nm, and the threshold current was 280 mA. This is the first demonstration of these lasers with no epitaxial regrowth.<>

Keywords

III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; indium compounds; ion beam lithography; molecular beam epitaxial growth; semiconductor growth; semiconductor lasers; 280 mA; 942 nm; GRINSCH; GaAs; IR; InGaAs; MBE; SQW; circular-grating; distributed-Bragg-reflector laser; electrically pumped; epitaxial regrowthless; focused ion beam lithography; graded-index separate confinement heterostructure; lasing wavelength; one-step molecular beam epitaxy; room temperature operation; semiconductors; single quantum well; strained single-quantum-well structure; surface-emitting DBR laser; threshold current; Distributed Bragg reflectors; Gallium arsenide; Indium gallium arsenide; Laser excitation; Molecular beam epitaxial growth; Optical device fabrication; Pump lasers; Quantum well lasers; Surface emitting lasers; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.163740

Filename

163740