Title :
11 GHz and 12 GHz multiwatt internal matching for power GaAs f.e.t.s
Author :
Takayama, Yoichiro ; Ogawa, Tadayuki ; Aona, Yoichi
Author_Institution :
Nippon Electric Co. Ltd., Central Research Laboratories, Kawasaki, Japan
Abstract :
Multiwatt internal-matching techniques for multichip power GaAs f.e.t.s at 11 GHz and 12 GHz bands have been developed, adopting a lumped-element input circuit and a semidistributed output circuit. The internally matched device for the 11 GHz band exhibits 4 W power output with 3.4 dB associated gain, and the 12 GHz device 3.6 W power output with 3 dB associated gain.
Keywords :
field effect transistors; impedance matching; power transistors; solid-state microwave devices; 11 GHz bands; 12 GHz band; 3 dB associated gain; 3.6 W power output; 4 W power output; Ku-band; X-band; impedance matching; internally matched device; microwave transistors; multichip power GaAs FETs; multiwatt internal matching; power transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790232
