Title :
Effects of emitter edge dislocations on the low frequency noise of silicon planar n-p-n transistors
Author :
Stojadinovi¿¿, N.D.
Author_Institution :
University of Ni¿, Facultly of Electronic Engineering, Ni¿, Yugoslavia
Abstract :
It is shown that the low-frequency noise in silicon planar n-p-n transistors is affected mainly by the emitter edge dislocations created during emitter phosphorus diffusion.
Keywords :
bipolar transistors; dislocations; electron device noise; LF noise; Si planar n-p-n transistors; bipolar transistors; dislocations generated during emitter P diffusion; electron device noise; emitter edge dislocations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790242
