Title :
Internal stress and degradation in short-wavelength AlGaAs double heterojunction devices
Author :
Ladany, I. ; Furman, T.R. ; Marinelli, D.P.
Author_Institution :
RCA Laboratories, Princeton, USA
Abstract :
Aging tests of incoherently operated zinc-doped double-heterojunction(d.h.) lasers designed for short-wavelength (0.71¿0.72 ¿m) operation show that the introduction of buffer layers between the substrate and the d.h. structure leads to a drastic reduction in gradual degradation. This is attributed to a decrease in lattice mismatch stress.
Keywords :
III-V semiconductors; ageing; aluminium compounds; gallium arsenide; semiconductor junction lasers; 0.71 to 0.72 micron wavelength; Zn:AlGaAs DH lasers; ageing; buffer layers; degradation; internal stress; junction lasers; lattice mismatch stress reduction; semiconductor; short wavelength operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790243
