DocumentCode :
951126
Title :
A monolithic 1 × 10 array of silicon avalanche photodiodes
Author :
Takahashi, Kazuhisa ; Takamiya, Saburo ; Mitsui, Shigeru
Author_Institution :
Mitsubishi Electric Corporation, Itami, Hyogo, Japan
Volume :
65
Issue :
12
fYear :
1977
Firstpage :
1727
Lastpage :
1728
Abstract :
A monolithic 1 × 10 array of silicon avalanche photodiodes (Si-APD´s) was fabricated. The deviations of breakdown voltages and current gains from mean values in an array were less than ±0.3 and ±2 percent, respectively. The optical interelemental coupling between the adjacent two elements in an array was estimated to be -57 dB.
Keywords :
Avalanche photodiodes; Circuits; FETs; Frequency; Power supplies; Resistors; Silicon; Temperature; Voltage; Voltage-controlled oscillators;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1977.10818
Filename :
1455087
Link To Document :
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