DocumentCode
951126
Title
A monolithic 1 × 10 array of silicon avalanche photodiodes
Author
Takahashi, Kazuhisa ; Takamiya, Saburo ; Mitsui, Shigeru
Author_Institution
Mitsubishi Electric Corporation, Itami, Hyogo, Japan
Volume
65
Issue
12
fYear
1977
Firstpage
1727
Lastpage
1728
Abstract
A monolithic 1 × 10 array of silicon avalanche photodiodes (Si-APD´s) was fabricated. The deviations of breakdown voltages and current gains from mean values in an array were less than ±0.3 and ±2 percent, respectively. The optical interelemental coupling between the adjacent two elements in an array was estimated to be -57 dB.
Keywords
Avalanche photodiodes; Circuits; FETs; Frequency; Power supplies; Resistors; Silicon; Temperature; Voltage; Voltage-controlled oscillators;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1977.10818
Filename
1455087
Link To Document