• DocumentCode
    951126
  • Title

    A monolithic 1 × 10 array of silicon avalanche photodiodes

  • Author

    Takahashi, Kazuhisa ; Takamiya, Saburo ; Mitsui, Shigeru

  • Author_Institution
    Mitsubishi Electric Corporation, Itami, Hyogo, Japan
  • Volume
    65
  • Issue
    12
  • fYear
    1977
  • Firstpage
    1727
  • Lastpage
    1728
  • Abstract
    A monolithic 1 × 10 array of silicon avalanche photodiodes (Si-APD´s) was fabricated. The deviations of breakdown voltages and current gains from mean values in an array were less than ±0.3 and ±2 percent, respectively. The optical interelemental coupling between the adjacent two elements in an array was estimated to be -57 dB.
  • Keywords
    Avalanche photodiodes; Circuits; FETs; Frequency; Power supplies; Resistors; Silicon; Temperature; Voltage; Voltage-controlled oscillators;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1977.10818
  • Filename
    1455087