DocumentCode
951408
Title
Numerical analysis of forward-biased diode structures based on direct-gap semiconductors
Author
Velmre, E. ; Freidin, B.
Author_Institution
Tallinn Polytechnic Institute, Electronics Department, Tallinn, USSR
Volume
15
Issue
13
fYear
1979
Firstpage
383
Lastpage
385
Abstract
A numerical model for investigation of the physical processes in forward-biased diode structures based on direct-gap semiconductors is described. The model is based on the numerical solution of the set of fundamental equations for semiconductors with boundary conditions on contacts. The effects related to the absorption of the recombination radiation are incorporated. Some results of calculations on GaAs are given.
Keywords
III-V semiconductors; electron traps; gallium arsenide; numerical analysis; p-n homojunctions; semiconductor device models; GaAs; direct gap semiconductors; forward biased diode structures; numerical model; physical processes; recombination radiation absorption; semiconductor device models;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19790277
Filename
4243386
Link To Document