Title :
A very low-noise CMOS preamplifier for capacitive sensors
Author :
Stefanelli, Bruno ; Bardyn, Jean-Paul ; Kaiser, Andreas ; Billet, Daniel
Author_Institution :
Inst. d´´Electron. et de Microelectron. du Nord, CNRS, Lille, France
fDate :
9/1/1993 12:00:00 AM
Abstract :
A CMOS preamplifier optimized for piezoelectric transducers is presented. The extensive use of CMOS-compatible lateral bipolar transistors (CLBTs) and careful layout leads to a very low noise along with good untrimmed DC and AC characteristics. These features make it competitive with bipolar and JFET realizations. In addition, long coaxial lines can be driven without significant alteration of performance using the two uncommitted on-chip buffers. This circuit was fabricated in a standard 3-μm p-well CMOS technology, opening perspectives to monolithic integration of data acquisition subsystems
Keywords :
CMOS integrated circuits; electric sensing devices; instrumentation amplifiers; linear integrated circuits; piezoelectric transducers; preamplifiers; 3 micron; CMOS preamplifier; CMOS-compatible lateral bipolar transistors; capacitive sensors; low-noise; p-well CMOS technology; piezoelectric transducers; Billets; Bipolar transistors; CMOS technology; Capacitance; Capacitive sensors; Coaxial components; Data acquisition; Power amplifiers; Preamplifiers; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
