BIAX analog storage element

The behavior of the BIAX device as an analog storage element is presented. BIAX, which is used primarily as a digital computer memory device, is applied as an analog storage element by using discrete levels of the flux range available around the storage hole. It is predicted from simple theory assuming equivalent uniaxial anisotropy that the stored flux levels can be read nondestructively by detecting the fundamental frequency component of induced voltage under the application of a dc bias and a sinusoidal readout magnetic field, and that the voltage is proportional to the flux levels and read-out magnetic fields. These characteristics are experimentally verified. The accuracies of readout with respect to the input-voltage-time integral and the stored flux levels are 14.6% and 2.1%, respectively. The drive frequency is in the range of 1 to 1000 kHz. The static and dynamic characteristics are improved with the ac bias field of high frequency. The element has the advantages of more than one bit per core site, large output levels, and high signal-to-noise ratio.