DocumentCode
951589
Title
Laser annealing of capped and uncapped GaAs
Author
Kular, S.S. ; Sealy, B.J. ; Badawi, M.H. ; Stephens, K.G. ; Sadana, D. ; Booker, G.R.
Author_Institution
University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
Volume
15
Issue
14
fYear
1979
Firstpage
413
Lastpage
414
Abstract
Ion-implanted GaAs samples have been annealed using a Q-switched ruby laser. Both Si3N4 capped and uncapped samples decomposed and gallium precipitates were formed at the surface. The gallium could be removed by dissolution in HCl to leave high-quality GaAs.
Keywords
III-V semiconductors; annealing; ceramics; etching; gallium arsenide; laser beam effects; particle backscattering; precipitation; silicon compounds; transmission electron microscope examination of materials; GaAs; HCl; Si3N4; TEM; capped; decomposed; dissolution; electrical properties; evaporation; ion implanted; laser annealing; precipitates; uncapped;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19790296
Filename
4243406
Link To Document