Changes in annealing behaviour of SiO2 on Si resulting from H2+ and D2+ ion bombardment

Thermal oxides on 2¿6 ¿cm Si have been bombarded with 40 keV H2+ and 80 keV D2+ ions at almost grazing incidence (7.5°) to doses of 1015 ions cm¿2. Anneals (30 and 45 min) were carried out in an r.f. furnace between 400 and 700°C in dry flowing N2 Implantation and subsequent annealing of bare oxide does not produce a Si/SiO2 structure which is superior to an Al/Si/SiO2 structure sintered at 400°C in dry N2. Implantation does however appear to suppress the development of large interface state densities at temperatures of 550°C and above, within the range investigated.