Title :
Light-induced effects in GaAs f.e.t.s
Author :
Graffeuil, J. ; Rossel, P. ; Martinot, H.
Author_Institution :
Centre National de la Recherche Scientifique, Laboratoire d´Automatique et d´Analyse des Systÿmes, Toulouse, France
Abstract :
It is shown theoretically and experimentally that the variations of the d.c. and dynamic properties in a GaAs f.e.t. when a light beam strikes the transistor´s gate can be accounted for by an appropriate change in the gate-junction equivalent built-in voltage. A simple relationship connects this change with the variations of the light intensity.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; DC variation; FET; Fermi level split; GaAs; III-V semiconductors; Schottky junction gate; dynamic properties; light induced effects; light intensity; pinch off voltage; transconductance; transistor characteristics; voltage change;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790315
