A highly linear double balanced Schottky diode S-band mixer

Author

Südow, Mattias ; Andersson, Kristoffer ; Nilsson, Per-Åke ; Rorsman, Niklas

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

16

Issue

6

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

336

Lastpage

338

Abstract

A high-level double balanced SiC Schottky diode mixer in SiC monolithic microwave integrated circuit (MMIC) technology has been designed, processed and characterized. The mixer is a single ended in- and output circuit with coupled transformers as baluns to enable a compact design, resulting in a total area of 2.2×2.2mm². The mixer has a maximum IIP₃ of 38dBm and IIP₂ of 58dBm at 3.3GHz, and a typical P_{1 dB} of 23dBm in the S-band. The minimum conversion loss was 12dBm at 2.4GHz. The high power operation of the mixer shows that SiC MMIC can perform well in high microwave radiation environments.

Keywords

MMIC mixers; Schottky diode mixers; silicon compounds; 2.4 GHz; 3.3 GHz; SiC; conversion loss; coupled transformer; high power operation; highly linear double balanced Schottky diode S-band mixer; monolithic microwave integrated circuit; Coupling circuits; Integrated circuit technology; MMICs; Microwave integrated circuits; Microwave technology; Monolithic integrated circuits; Process design; Schottky diodes; Silicon carbide; Transformers; High linearity; Schottky; SiC monolithic microwave integrated circuit (MMIC);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.875625

Filename

1637487