• DocumentCode
    952589
  • Title

    Effects of laser irradiation of GaAs observed by d.l.t.s.

  • Author

    Emerson, Neil G. ; Sealy, B.J.

  • Author_Institution
    University of Surrey, Department of Electronic and Electrical Engineering, Guildford, UK
  • Volume
    15
  • Issue
    18
  • fYear
    1979
  • Firstpage
    553
  • Lastpage
    554
  • Abstract
    A Q-switched ruby laser has been used to heat-treat vapourphase-epitaxial (v.p.e.) GaAs. The characteristic A-centre, a deep trapping level at 0.83 eV, is removed using a laser pulse of energy density 0.3 J cm¿2. Trapping levels are observed using deep-level transient spectroscopy (d.l.t.s.).
  • Keywords
    III-V semiconductors; deep levels; gallium arsenide; laser beam effects; semiconductor epitaxial layers; 0.83 eV; A-centre; DLTS; GaAs; Q-switched ruby laser; VPE; deep level transient spectroscopy; deep trapping level; laser irradiation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790397
  • Filename
    4243521
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=952589