• DocumentCode
    952637
  • Title

    Ion-Implantation Technology and Device Applications

  • Author

    Comas, J.

  • Author_Institution
    Naval Research Laboratory, Washington, D.C.
  • Volume
    10
  • Issue
    4
  • fYear
    1974
  • fDate
    12/1/1974 12:00:00 AM
  • Firstpage
    234
  • Lastpage
    239
  • Abstract
    The introduction of impurity atoms into a surface by means of ion implantation is a well established technique in the semiconductor field. The main advantages of ion-implantation doping are its high controllability, uniformity, and reproducibility. Increasing applications, coupled with the development and availability of commercial equipment, has resulted in the use of the implantation technology in most major semiconductor processing facilities. Discussed in this review paper are: the ion-implantation process; standard ionimplantation equipment and operating parameters; and applications in device structures.
  • Keywords
    Ion implantation; Annealing; Atomic layer deposition; Controllability; Doping profiles; Fabrication; Ion implantation; Semiconductor device doping; Semiconductor impurities; Solids; Temperature;
  • fLanguage
    English
  • Journal_Title
    Parts, Hybrids, and Packaging, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0361-1000
  • Type

    jour

  • DOI
    10.1109/TPHP.1974.1134869
  • Filename
    1134869