DocumentCode
952637
Title
Ion-Implantation Technology and Device Applications
Author
Comas, J.
Author_Institution
Naval Research Laboratory, Washington, D.C.
Volume
10
Issue
4
fYear
1974
fDate
12/1/1974 12:00:00 AM
Firstpage
234
Lastpage
239
Abstract
The introduction of impurity atoms into a surface by means of ion implantation is a well established technique in the semiconductor field. The main advantages of ion-implantation doping are its high controllability, uniformity, and reproducibility. Increasing applications, coupled with the development and availability of commercial equipment, has resulted in the use of the implantation technology in most major semiconductor processing facilities. Discussed in this review paper are: the ion-implantation process; standard ionimplantation equipment and operating parameters; and applications in device structures.
Keywords
Ion implantation; Annealing; Atomic layer deposition; Controllability; Doping profiles; Fabrication; Ion implantation; Semiconductor device doping; Semiconductor impurities; Solids; Temperature;
fLanguage
English
Journal_Title
Parts, Hybrids, and Packaging, IEEE Transactions on
Publisher
ieee
ISSN
0361-1000
Type
jour
DOI
10.1109/TPHP.1974.1134869
Filename
1134869
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