DocumentCode :
952663
Title :
Chemically Vapor Deposited Polycrystalline-Silicon Films
Author :
Kamins, Theodore I.
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, CA
Volume :
10
Issue :
4
fYear :
1974
fDate :
12/1/1974 12:00:00 AM
Firstpage :
221
Lastpage :
229
Abstract :
In recent years polycrystalline silicon deposited by chemical vapor deposition has become of importance in many semiconductor applications. The formation and properties of films deposited for different applications are reviewed in this paper, and the use of the films in semiconductor devices is discussed. The deposition temperature, gases, and impurities are found to have the major influence on the properties of the films. These deposition variables significantly affect the crystal
Keywords :
Bibliographies; Semiconductor films; Silicon; Chemicals; Dielectrics; Ferroelectric materials; Infrared detectors; Laboratories; Nonlinear optics; Optical films; Piezoelectric films; Pyroelectricity; Semiconductor films;
fLanguage :
English
Journal_Title :
Parts, Hybrids, and Packaging, IEEE Transactions on
Publisher :
ieee
ISSN :
0361-1000
Type :
jour
DOI :
10.1109/TPHP.1974.1134872
Filename :
1134872
Link To Document :
بازگشت