DocumentCode
952663
Title
Chemically Vapor Deposited Polycrystalline-Silicon Films
Author
Kamins, Theodore I.
Author_Institution
Hewlett-Packard Laboratories, Palo Alto, CA
Volume
10
Issue
4
fYear
1974
fDate
12/1/1974 12:00:00 AM
Firstpage
221
Lastpage
229
Abstract
In recent years polycrystalline silicon deposited by chemical vapor deposition has become of importance in many semiconductor applications. The formation and properties of films deposited for different applications are reviewed in this paper, and the use of the films in semiconductor devices is discussed. The deposition temperature, gases, and impurities are found to have the major influence on the properties of the films. These deposition variables significantly affect the crystal
Keywords
Bibliographies; Semiconductor films; Silicon; Chemicals; Dielectrics; Ferroelectric materials; Infrared detectors; Laboratories; Nonlinear optics; Optical films; Piezoelectric films; Pyroelectricity; Semiconductor films;
fLanguage
English
Journal_Title
Parts, Hybrids, and Packaging, IEEE Transactions on
Publisher
ieee
ISSN
0361-1000
Type
jour
DOI
10.1109/TPHP.1974.1134872
Filename
1134872
Link To Document