• DocumentCode
    952663
  • Title

    Chemically Vapor Deposited Polycrystalline-Silicon Films

  • Author

    Kamins, Theodore I.

  • Author_Institution
    Hewlett-Packard Laboratories, Palo Alto, CA
  • Volume
    10
  • Issue
    4
  • fYear
    1974
  • fDate
    12/1/1974 12:00:00 AM
  • Firstpage
    221
  • Lastpage
    229
  • Abstract
    In recent years polycrystalline silicon deposited by chemical vapor deposition has become of importance in many semiconductor applications. The formation and properties of films deposited for different applications are reviewed in this paper, and the use of the films in semiconductor devices is discussed. The deposition temperature, gases, and impurities are found to have the major influence on the properties of the films. These deposition variables significantly affect the crystal
  • Keywords
    Bibliographies; Semiconductor films; Silicon; Chemicals; Dielectrics; Ferroelectric materials; Infrared detectors; Laboratories; Nonlinear optics; Optical films; Piezoelectric films; Pyroelectricity; Semiconductor films;
  • fLanguage
    English
  • Journal_Title
    Parts, Hybrids, and Packaging, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0361-1000
  • Type

    jour

  • DOI
    10.1109/TPHP.1974.1134872
  • Filename
    1134872