Ku- and K-band internally matched high-power GaAs f.e.t. amplifiers

Internal-matching techniques, using lumped-element capacitors fabricated on high dielectric ceramics, have been developed for high power GaAs f.e.t.s in Ku- and K-bands. The developed internally matched high-power f.e.t. amplifier modules have exhibited 1.9 W power output with 4 dB associated gain at 14 GHz and 1.25 W power output with 3 dB associated gain at 18 GHz.