• DocumentCode
    952689
  • Title

    Conversion gain of m.e.s.f.e.t. drain mixers

  • Author

    Begemann, Günther ; Jacob, Arne

  • Author_Institution
    Technische Universitÿt Braunschweig, Institut fÿr Hochfrequenztechnik, Braunschweig, West Germany
  • Volume
    15
  • Issue
    18
  • fYear
    1979
  • Firstpage
    567
  • Lastpage
    568
  • Abstract
    A theoretical analysis of the gain properties of m.e.s.f.e.t. drain mixers is presented. The m.e.s.f.e.t. model includes the nonlinearity of both the transconductance and the drain resistance. For a special case, a simple analytical expression for the gain is given. Numerical results for a typical example are briefly presented as an illustration.
  • Keywords
    Schottky gate field effect transistors; field effect transistor circuits; mixers (circuits); semiconductor device models; solid-state microwave circuits; MESFET model; conversion gain; drain mixers; gain properties; nonlinear drain resistance; nonlinear transconductance; theoretical analysis;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790407
  • Filename
    4243535
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=952689