Title :
Conversion gain of m.e.s.f.e.t. drain mixers
Author :
Begemann, Günther ; Jacob, Arne
Author_Institution :
Technische Universitÿt Braunschweig, Institut fÿr Hochfrequenztechnik, Braunschweig, West Germany
Abstract :
A theoretical analysis of the gain properties of m.e.s.f.e.t. drain mixers is presented. The m.e.s.f.e.t. model includes the nonlinearity of both the transconductance and the drain resistance. For a special case, a simple analytical expression for the gain is given. Numerical results for a typical example are briefly presented as an illustration.
Keywords :
Schottky gate field effect transistors; field effect transistor circuits; mixers (circuits); semiconductor device models; solid-state microwave circuits; MESFET model; conversion gain; drain mixers; gain properties; nonlinear drain resistance; nonlinear transconductance; theoretical analysis;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790407
