Field-effect transistor based on /spl beta/-SiC nanowire

Author

Zhou, W.M. ; Fang, F. ; Hou, Z.Y. ; Yan, L.J. ; Zhang, Y.F.

Author_Institution

Inst. of Micro & Nano Sci. & Technol., Shanghai Jiao Tong Univ., China

Volume

27

Issue

6

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

463

Lastpage

465

Abstract

/spl beta/-SiC nanowires were synthesized by the way of high-frequency induction with diameter range between 10 to 25 nm and the length was up to 10 μm. Field-effect transistor was fabricated with those synthesized /spl beta/-SiC nanowires. The carrier mobilities of the n-type SiCFETs were 6.4 and 15.9 cm²/V/spl middot/s when V/sub ds/ is 0.01 and 0.05 V at room temperature, respectively. At high temperature, the drain current increased by one order of magnitude than it did at room temperature. The carrier mobility versus 1000/T agreed well with the Arrhenius function. The SiCFETs Would be used as electrical devices operated in high temperatures because of their superior properties.

Keywords

carrier mobility; field effect transistors; high-temperature electronics; nanowires; silicon compounds; 0.01 to 0.05 V; 10 micron; 10 to 25 nm; Arrhenius function; SiC; carrier mobilities; drain current; field effect transistors; nanowires; Argon; Educational technology; Electrodes; FETs; Gold; Optical films; Scanning electron microscopy; Silicon carbide; Temperature; Voltage; Field-effect transistor (FET); high temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.874219

Filename

1637558