DocumentCode
952748
Title
Pt-Germanide Schottky source/drain Germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode
Author
Li, Rui ; Lee, S.J. ; Yao, H.B. ; Chi, D.Z. ; Yu, M.B. ; Kwong, D.L.
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Volume
27
Issue
6
fYear
2006
fDate
6/1/2006 12:00:00 AM
Firstpage
476
Lastpage
478
Abstract
Schottky source/drain (S/D) transistors using Pt-germanide and HfO2/TaN gate stack are fabricated on Ge-substrate with conventional self-aligned top-gate process. It was found that Pt-germanide provides promising properties for p-MOSFET: negative effective hole barrier height, low resistivity, atomically sharp junction with Ge with good morphology. Pt-germanide Ge-p-MOSFETs showed well-behaved ID-VD characteristics and much suppressed Ioff compared to Ni-germanide and conventional heavily doped S/D MOSFETs.
Keywords
MOSFET; Schottky gate field effect transistors; elemental semiconductors; germanium; hafnium compounds; high-k dielectric thin films; platinum alloys; tantalum compounds; HfO2-TaN; Pt-Ge; Pt-germanide; Schottky source/drain transistors; TaN gate electrode; atomically sharp junction; germanium p-MOSFET; high-k gate dielectric; low resistivity; metal gate MOSFET; negative effective hole barrier height; Conductivity; Dielectric substrates; Electrodes; Fabrication; Germanium; Hafnium oxide; Laboratories; MOSFET circuits; Rapid thermal annealing; Silicon; Germanium; MOSFET; Schottky; high-; metal gate;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2006.874128
Filename
1637562
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