DocumentCode :
952766
Title :
Physical insights on electron mobility in contemporary FinFETs
Author :
Chowdhury, M.M. ; Fossum, J.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Volume :
27
Issue :
6
fYear :
2006
fDate :
6/1/2006 12:00:00 AM
Firstpage :
482
Lastpage :
485
Abstract :
Calibration of a physics/process-based model for double-gate (DG) MOSFETs to contemporary nanoscale undoped n-channel DG FinFETs reveals that 1) significant densities of source/drain donor dopants readily diffuse to the ultrathin (fin) body/channel, even with relatively long fin extensions, degrading electron mobility at low/moderate levels of inversion-carrier density (Ninv), 2) surface-roughness scattering of electrons is less severe at the {110} silicon-fin surfaces than anticipated, and 3) strong-inversion electron mobility is quite high (e.g., ≅290 cm2/V·s at Ninv=1013 cm-2), being about three times higher than that in contemporary bulk-Si MOSFETs.
Keywords :
MOSFET; calibration; electron mobility; elemental semiconductors; silicon; surface roughness; surface scattering; Si; Si-fin dopant diffusion; bulk-Si MOSFET; calibration; double-gate MOSFET; electron mobility; inversion-carrier density; n-channel DG FinFET; nanoscale DG FinFET; silicon-fin surfaces; surface-roughness scattering; ultrathin body transport; undoped DG FinFET; CMOS process; CMOS technology; Calibration; Eigenvalues and eigenfunctions; Electron mobility; FinFETs; MOSFETs; Particle scattering; Physics; Silicon; Si-fin dopant diffusion; surface-roughness scattering; ultrathin (fin) body (UTB) transport;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2006.874214
Filename :
1637564
Link To Document :
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