• DocumentCode
    952772
  • Title

    Microwave gain from an n-channel enhancement-mode InP m.i.s.f.e.t.

  • Author

    Meiners, L.G. ; Lile, D.L. ; Collins, D.A.

  • Author_Institution
    Naval Ocean Systems Center, Electronic Material Sciences Division, San Diego, USA
  • Volume
    15
  • Issue
    18
  • fYear
    1979
  • Firstpage
    578
  • Abstract
    A power gain of 14 dB at 1 GHz has been demonstrated in an enhancement-mode m.i.s.f.e.t. constructed on an Fe-doped semi-insulating InP substrate. The same device also exhibits well behaved gain characteristics at low frequencies.
  • Keywords
    insulated gate field effect transistors; solid-state microwave devices; 1 GHz; 14 dB power gain; gain characteristics; low frequencies; microwave gain; n-channel enhancement mode MISFET;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790415
  • Filename
    4243545
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=952772