Title :
Ultrafast floating 75-V lateral IGBT with a buried hole diverter and an effective junction isolation
Author :
Bakeroot, B. ; Doutreloigne, J. ; Moens, P.
Author_Institution :
Ghent Univ., Belgium
fDate :
6/1/2006 12:00:00 AM
Abstract :
A low-voltage lateral insulated gate bipolar transistor (IGBT) is proposed for junction-isolated smart power technologies. An effective suppression of the substrate current is obtained through the use of a double buried layer structure. This structure, with the buried layer of p-type (BLP) on top of the buried layer of n-type, also ensures fast switching and a wide safe operating area as the BLP serves as a buried hole diverter in the on state and during turnoff. The floating capability of the device is also provided by the double buried layer. This lateral IGBT (LIGBT) is made in a standard smart power technology without adding extra masks. Due to the low power losses in the on state and during switching, this n-type LIGBT is competitive with n-type DMOS devices.
Keywords :
divertors; insulated gate bipolar transistors; isolation technology; power semiconductor devices; switching transients; 75 V; buried hole diverter; effective junction isolation; effective suppression; insulated gate bipolar transistor; junction-isolated technology; lateral IGBT; n-type DMOS devices; n-type LIGBT; p-type BLP; power semiconductor devices; standard smart power technology; substrate current; switching transient; ultrafast floating; Bipolar transistors; CMOS technology; Cathodes; Crosstalk; Insulated gate bipolar transistors; Isolation technology; Power semiconductor devices; Power semiconductor switches; Silicon on insulator technology; Substrates; Insulated gate bipolar transistor (IGBT); junction-isolated technology; power semiconductor devices; switching transient;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.875146
