DocumentCode
952934
Title
Evidence of trapping in device-quality liquid-phase-epitaxial In1¿xGaxAsyP1¿y
Author
Bhattacharya, P.K. ; Ku, J.W. ; Owen, S.J.T. ; Chiao, S.H. ; Yeats, R.
Author_Institution
Oregon State University, Department of Electrical and Computer Engineering, Corvallis, USA
Volume
15
Issue
23
fYear
1979
Firstpage
753
Lastpage
755
Abstract
Traps have been identified in epitaxial n- and p-type In1¿xGaxAsyP1¿y for the first time. The activation energy, capture cross-section and density of several electron traps in the quaternary composition range from InP to In0.53Ga0.47As have been determined. An electron trap similar in some characteristics to the 0.83 eV electron trap present dominantly in bulk and v.p.e. GaAs was observed in an n-type In0.71Ga0.29As0.45P0.55(Eg=0.95 eV) layer. Hole traps were not observed.
Keywords
III-V semiconductors; electron traps; gallium compounds; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; III-V semiconductors; In1-xGaxAsyP1-y; LPE layers; activation energy; capture cross sections; device quality semiconductor material; electron traps density; n-type semiconductors; p-type semiconductors; semiconductor epitaxial layers; trapping;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19790538
Filename
4243593
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