• DocumentCode
    952995
  • Title

    Interfacial polarisation in Al-Y2O3-SiO2-Si capacitor

  • Author

    Ling, C.H.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
  • Volume
    29
  • Issue
    19
  • fYear
    1993
  • Firstpage
    1676
  • Lastpage
    1678
  • Abstract
    The variation by a factor of 2 in the observed permittivity of yttrium oxide film is explained in terms of interfacial polarization based on the Y2O3/SiO2 double-layer model. Provided the dielectric relaxation time constants of the two layers are grossly dissimilar, the model can also explain the frequency independence of the composite capacitor.
  • Keywords
    aluminium; capacitors; dielectric polarisation; dielectric relaxation; dielectric thin films; elemental semiconductors; interface phenomena; metal-insulator-semiconductor structures; permittivity; silicon; silicon compounds; yttrium compounds; Al-Y 2O 3-SiO 2-Si; Y 2O 3 thin film; Y 2O 3/SiO 2 double-layer model; composite capacitor; dielectric relaxation time constants; frequency independence; interfacial polarization; permittivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931115
  • Filename
    237341
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=952995